产品分类 | 专用/特殊传感器 |
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Product Category: | Bipolar Transistors - BJT |
Mounting Style: | Through Hole |
Package / Case: | TO-39-3 |
Transistor Polarity: | NPN |
Configuration: | Single |
Collector- Emitter Voltage VCEO Max: | 60 V |
Collector- Base Voltage VCBO: | 80 V |
Emitter- Base Voltage VEBO: | 5 V |
Collector-Emitter Saturation Voltage: | 0.8 V |
Maximum DC Collector Current: | 3 A |
Pd - Power Dissipation: | 5 W |
Gain Bandwidth Product fT: | 30 MHz |
Minimum Operating Temperature: | - 65 C |
Maximum Operating Temperature: | + 200 C |
Packaging: | Bulk |
DC Current Gain hFE Max: | 160 |
Technology: | Si |
Brand: | Central Semiconductor |
Continuous Collector Current: | 3 A |
DC Collector/Base Gain hfe Min: | 63 |
Product Type: | BJTs - Bipolar Transistors |
Factory Pack Quantity: | 500 |
Subcategory: | Transistors |
Part # Aliases: | BSX63-10 PBFREE |
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