• 品       牌：TI(德州仪器)
• 型       号：SN74CBT16211CDLR
• 商品编号：IC0242428
• 封装规格：
• 商品描述： The SN74CBT16211C is a high-speed TTL-compatible FET bus switch with low ON-state resistance (r; ), allowing for minimal propagation delay. Active Undershoot-Protection Circuitry on the A and B ports of the SN74CBT16211C provides protection for undershoot up to –2 V by sensing an undershoot event and ensuring that the switch remains in the proper OFF state.; The SN74CBT16211C is organized as two 12-bit bus switches with separate output-enable (1OE\, 2OE\) inputs. It can be used as two 12-bit bus switches or as one 24-bit bus switch. When OE\ is low, the associated 12-bit bus switch is ON, and the A port is connected to the B port, allowing bidirectional data flow between ports. When OE\ is high, the associated 12-bit bus switch is OFF, and the high-impedance state exists between the A and B ports.; This device is fully specified for partial-power-down applications using I; . The I; feature ensures that damaging current will not backflow through the device when it is powered down.; To ensure the high-impedance state during power up or power down, OE\ should be tied to V; through a pullup resistor; the minimum value of the resistor is determined by the current-sinking capability of the driver. The SN74CBT16211C is a high-speed TTL-compatible FET bus switch with low ON-state resistance (r; ), allowing for minimal propagation delay. Active Undershoot-Protection Circuitry on the A and B ports of the SN74CBT16211C provides protection for undershoot up to –2 V by sensing an undershoot event and ensuring that the switch remains in the proper OFF state.; The SN74CBT16211C is organized as two 12-bit bus switches with separate output-enable (1OE\, 2OE\) inputs. It can be used as two 12-bit bus switches or as one 24-bit bus switch. When OE\ is low, the associated 12-bit bus switch is ON, and the A port is connected to the B port, allowing bidirectional data flow between ports. When OE\ is high, the associated 12-bit bus switch is OFF, and the high-impedance state exists between the A and B ports.; This device is fully specified for partial-power-down applications using I; . The I; feature ensures that damaging current will not backflow through the device when it is powered down.; To ensure the high-impedance state during power up or power down, OE\ should be tied to V; through a pullup resistor; the minimum value of the resistor is determined by the current-sinking capability of the driver.