• 品       牌：Infineon(英飞凌)
• 型       号：IMW65R057M1HXKSA1
• 商品编号：MD0888830
• 封装规格：
• 商品描述： CoolSiC™ MOSFET technology leverages the strong physical characteristics of silicon carbide, adding unique features that increase the device performance, robustness, and ease of use. The IMW65R057M1H CoolSiC™ MOSFET 650V is built on a state-of-the-art trench semiconductor, optimized to allow no compromises in getting both the lowest losses in the application and the highest reliability in operation. This SiC MOSFET comes in a TO247 3-pin package with a cost-effective performance. CoolSiC™ MOSFET technology leverages the strong physical characteristics of silicon carbide, adding unique features that increase the device performance, robustness, and ease of use. The IMW65R057M1H CoolSiC™ MOSFET 650V is built on a state-of-the-art trench semiconductor, optimized to allow no compromises in getting both the lowest losses in the application and the highest reliability in operation. This SiC MOSFET comes in a TO247 3-pin package with a cost-effective performance.